1024MB, Single DIMM, 1066Mhz, CL5, 5-5-5-15, Non ECC, 240 pins, Double-data-rate architecture, Bidirectional data strobe(DQS), Differential clock inputs(CK and CK), DLL aligns DQ and DQS transition with CK transition, Programmable Burst type (sequential & interleave), Edge aligned data output, center aligned data input, Serial presence detect with EEPROM
2048MB, Single DIMM, 1066Mhz, CL5, 5-5-5-15, Non ECC, 240 pins, Double-data-rate architecture, Bidirectional data strobe(DQS), Differential clock inputs(CK and CK), DLL aligns DQ and DQS transition with CK transition, Programmable Burst type (sequential & interleave), Edge aligned data output, center aligned data input, Serial presence detect with EEPROM
2048MB (2x1024MB), 2xSO-DIMM, 667MHz, CL4, 4-4-4-12, Non ECC (Low Latency), 200 pins, High-performance, low-latency HyperX notebook memory, is a perfect fit for notebook users who want to boost system performance by replacing their standard notebook memory that boot to the highest speed possible, Double-data-rate architecture, two data transfers per clock cycle, Bidirectional data strobe(DQS), Differential clock inputs(CK and CK), DLL aligns DQ and DQS transition with CK transition
2048MB (2x1024MB), 2xSO-DIMM, 800MHz, CL5, 5-5-5-18, Non ECC (Low Latency), 200 pins, High-performance, low-latency HyperX notebook memory, is a perfect fit for notebook users who want to boost system performance by replacing their standard notebook memory that boot to the highest speed possible, Double-data-rate architecture, two data transfers per clock cycle, Bidirectional data strobe(DQS), Differential clock inputs(CK and CK), DLL aligns DQ and DQS transition with CK transition
2048MB (2x1024MB), 2xDIMM, 800Mhz, CL4, 4-4-4-12, Non ECC (Low Latency), 240 pins, Certified as NVIDIA SLI Ready, Double-data-rate architecture; two data transfers per clock cycle, Bidirectional data strobe(DQS), Differential clock inputs(CK and CK), DLL aligns DQ and DQS transition with CK transition, Programmable Read latency 3, 4, 5 (clock), Burst Length: 4, 8 (Interleave/nibble sequential), Programmable Burst type (sequential & interleave), Edge aligned data output, center aligned data input, Serial presence detect with EEPROM, High Performance Heat Spreader
4096MB (2x2048MB), 2xSO-DIMM, 667MHz, CL4, 4-4-4-12, Non ECC (Low Latency), 200 pins, High-performance, low-latency HyperX notebook memory, is a perfect fit for notebook users who want to boost system performance by replacing their standard notebook memory that boot to the highest speed possible, Double-data-rate architecture, two data transfers per clock cycle, Bidirectional data strobe(DQS), Differential clock inputs(CK and CK), DLL aligns DQ and DQS transition with CK transition
4096MB (2x2048MB), 2xSO-DIMM, 800MHz, CL5, 5-5-5-18, Non ECC (Low Latency), 200 pins, High-performance, low-latency HyperX notebook memory, is a perfect fit for notebook users who want to boost system performance by replacing their standard notebook memory that boot to the highest speed possible, Double-data-rate architecture, two data transfers per clock cycle, Bidirectional data strobe(DQS), Differential clock inputs(CK and CK), DLL aligns DQ and DQS transition with CK transition
4096MB (2x2048MB), 2xDIMM, 1625MHz, CL7, 7-7-7-20, Non ECC, 240 pins, Kingston's KHX13000D3LLK2/4G is a kit of two 256M x 64-bit 2GB (2048MB) DDR3-1600 CL8 SDRAM (Synchronous DRAM) memory modules, based on sixteen 128M x 8-bit DDR3 FBGA components per module, 8 independent internal bank, Posted CAS, Bi-directional Differential Data Strobe, On Die Termination using ODT pin, Asynchronous Reset